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Hydrodynamic electronic fluid instability in GaAs MESFETs …

Hydrodynamic electronic fluid instability in GaAs MESFETs …

Received 29 August 2017, revised 16 November 2017 Accepted for publication 23 November 2017 Published 27 December 2017 Abstract III–V compound semiconductor field effect transistors (FETs) are potential candidates as solid state THz emitters and detectors due to plasma wave instability in these devices. Using a 2D hydrodynamic model, here we present the numerical studies of electron fluid …